What is Power electronics?

Definition

Power electronics is the application of solid-state electronics to the control and conversion of electric power. It also refers to a subject of research in electronic and electrical engineering which deals with the design, control, computation and integration of nonlinear, time-varying energy-processing electronic systems with fast dynamics.

The first high power electronic devices were mercury-arc valves. In modern systems the conversion is performed with semiconductor switching devices such as diodes, thyristors and transistors, pioneered by R. D. Middlebrook and others beginning in the 1950s. In contrast to electronic systems concerned with transmission and processing of signals and data, in power electronics substantial amounts of electrical energy are processed. An AC/DC converter (rectifier) is the most typical power electronics device found in many consumer electronic devices, e.g. television sets, personal computers, battery chargers, etc. The power range is typically from tens of watts to several hundred watts. In industry a common application is the variable speed drive (VSD) that is used to control an induction motor. The power range of VSDs start from a few hundred watts and end at tens of megawatts.

The power conversion systems can be classified according to the type of the input and output power

AC to DC (rectifier)
DC to AC (inverter)
DC to DC (DC-to-DC converter)
AC to AC (AC-to-AC converter)

Devices

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The capabilities and economy of power electronics system are determined by the active devices that are available. Their characteristics and limitations are a key element in the design of power electronics systems. Formerly, the mercury arc valve, the high-vacuum and gas-filled diode thermionic rectifiers, and triggered devices such as the thyratron and ignitron were widely used in power electronics. As the ratings of solid-state devices improved in both voltage and current-handling capacity, vacuum devices have been nearly entirely replaced by solid-state devices.

Power electronic devices may be used as switches, or as amplifiers. An ideal switch is either open or closed and so dissipates no power; it withstands an applied voltage and passes no current, or passes any amount of current with no voltage drop. Semiconductor devices used as switches can approximate this ideal property and so most power electronic applications rely on switching devices on and off, which makes systems very efficient as very little power is wasted in the switch. By contrast, in the case of the amplifier, the current through the device varies continuously according to a controlled input. The voltage and current at the device terminals follow a load line, and the power dissipation inside the device is large compared with the power delivered to the load.

Several attributes dictate how devices are used. Devices such as diodes conduct when a forward voltage is applied and have no external control of the start of conduction. Power devices such as silicon controlled rectifiers and thyristors (as well as the mercury valve and thyratron) allow control of the start of conduction, but rely on periodic reversal of current flow to turn them off. Devices such as gate turn-off thyristors, BJT and MOSFET transistors provide full switching control and can be turned on or off without regard to the current flow through them. Transistor devices also allow proportional amplification, but this is rarely used for systems rated more than a few hundred watts. The control input characteristics of a device also greatly affect design; sometimes the control input is at a very high voltage with respect to ground and must be driven by an isolated source.

As efficiency is at a premium in a power electronic converter, the losses that a power electronic device generates should be as low as possible.

Devices vary in switching speed. Some diodes and thyristors are suited for relatively slow speed and are useful for power frequency switching and control; certain thyristors are useful at a few kilohertz. Devices such as MOSFETS and BJTs can switch at tens of kilohertz up to a few megahertz in power applications, but with decreasing power levels. Vacuum tube devices dominate high power (hundreds of kilowatts) at very high frequency (hundreds or thousands of megahertz) applications. Faster switching devices minimize energy lost in the transitions from on to off and back, but may create problems with radiated electromagnetic interference. Gate drive (or equivalent) circuits must be designed to supply sufficient drive current to achieve the full switching speed possible with a device. A device without sufficient drive to switch rapidly may be destroyed by excess heating.

Practical devices have non-zero voltage drop and dissipate power when on, and take some time to pass through an active region until they reach the "on" or "off" state. These losses are a significant part of the total lost power in a converter.

Power handling and dissipation of devices is also a critical factor in design. Power electronic devices may have to dissipate tens or hundreds of watts of waste heat, even switching as efficiently as possible between conducting and non-conducting states. In the switching mode, the power controlled is much larger than the power dissipated in the switch. The forward voltage drop in the conducting state translates into heat that must be dissipated. High power semiconductors require specialized heat sinks or active cooling systems to manage their junction temperature; exotic semiconductors such as silicon carbide have an advantage over straight silicon in this respect, and germanium, once the main-stay of solid-state electronics is now little used due to its unfavorable high temperature properties.

Semiconductor devices exist with ratings up to a few kilovolts in a single device. Where very high voltage must be controlled, multiple devices must be used in series, with networks to equalize voltage across all devices. Again, switching speed is a critical factor since the slowest-switching device will have to withstand a disproportionate share of the overall voltage. Mercury valves were once available with ratings to 100 kV in a single unit, simplifying their application in HVDC systems.

The current rating of a semiconductor device is limited by the heat generated within the dies and the heat developed in the resistance of the interconnecting leads. Semiconductor devices must be designed so that current is evenly distributed within the device across its internal junctions (or channels); once a "hot spot" develops, breakdown effects can rapidly destroy the device. Certain SCRs are available with current ratings to 3000 amperes in a single unit.

Solid-state devices

Device Description Ratings

Diode Uni-polar, uncontrolled, switching device used in applications such as rectification and circuit directional current control. Reverse voltage blocking device, commonly modeled as a switch in series with a voltage source, usually 0.7 VDC. The model can be enhanced to include a junction resistance, in order to accurately predict the diode voltage drop across the diode with respect to current flow. Up to 3000 amperes and 5000 volts in a single silicon device. High voltage requires multiple series silicon devices.
Silicon-controlled rectifier (SCR) This semi-controlled device turns on when a gate pulse is present and the anode is positive compared to the cathode. When a gate pulse is present, the device operates like a standard diode. When the anode is negative compared to the cathode, the device turns off and blocks positive or negative voltages present. The gate voltage does not allow the device to turn off.[4] Up to 3000 amperes, 5000 volts in a single silicon device.
Thyristor The thyristor is a family of three-terminal devices that include SCRs, GTOs, and MCT. For most of the devices, a gate pulse turns the device on. The device turns off when the anode voltage falls below a value (relative to the cathode) determined by the device characteristics. When off, it is considered a reverse voltage blocking device.
Gate turn-off thyristor (GTO) The gate turn-off thyristor, unlike an SCR, can be turned on and off with a gate pulse. One issue with the device is that turn off gate voltages are usually larger and require more current than turn on levels. This turn off voltage is a negative voltage from gate to source, usually it only needs to be present for a short time, but the magnitude s on the order of 1/3 of the anode current. A snubber circuit is required in order to provide a usable switching curve for this device. Without the snubber circuit, the GTO cannot be used for turning inductive loads off. These devices, because of developments in IGCT technology are not very popular in the power electronics realm. They are considered controlled, uni-polar and bi-polar voltage blocking.
Triac The triac is a device that is essentially an integrated pair of phase-controlled thyristors connected in inverse-parallel on the same chip. Like an SCR, when a voltage pulse is present on the gate terminal, the device turns on. The main difference between an SCR and a Triac is that both the positive and negative cycle can be turned on independently of each other, using a positive or negative gate pulse. Similar to an SCR, once the device is turned on, the device cannot be turned off. This device is considered bi-polar and reverse voltage blocking.
Bipolar junction transistor (BJT) The BJT cannot be used at high power; they are slower and have more resistive losses when compared to MOSFET type devices. To carry high current, BJTs must have relatively large base currents, thus these devices have high power losses when compared to MOSFET devices. BJTs along with MOSFETs, are also considered unipolar and do not block reverse voltage very well, unless installed in pairs with protection diodes. Generally, BJTs are not utilized in power electronics switching circuits because of the I2R losses associated with on resistance and base current requirements. BJTs have lower current gains in high power packages, thus requiring them to be set up in Darlington configurations in order to handle the currents required by power electronic circuits. Because of these multiple transistor configurations, switching times are in the hundreds of nanoseconds to microseconds. Devices have voltage ratings which max out around 1500 V and fairly high current ratings. They can also be paralleled in order to increase power handling, but must be limited to around 5 devices for current sharing.
Power MOSFET The main benefit of the power MOSFET is that the base current for BJT is large compared to almost zero for MOSFET gate current. Since the MOSFET is a depletion channel device, voltage, not current, is necessary to create a conduction path from drain to source. The gate does not contribute to either drain or source current. Turn on gate current is essentially zero with the only power dissipated at the gate coming during switching. Losses in MOSFETs are largely attributed to on-resistance. The calculations show a direct correlation to drain source on-resistance and the device blocking voltage rating, BVdss.
Switching times range from tens of nanoseconds to a few hundred microseconds, depending on the device. MOSFET drain source resistances increase as more current flows through the device. As frequencies increase the losses increase as well, making BJTs more attractive. Power MOSFETs can be paralleled in order to increase switching current and therefore overall switching power. Nominal voltages for MOSFET switching devices range from a few volts to a little over 1000 V, with currents up to about 100 A or so. Newer devices may have higher operational characteristics. MOSFET devices are not bi-directional, nor are they reverse voltage blocking.

Insulated-gate bipolar transistor (IGBT) These devices have the best characteristics of MOSFETs and BJTs. Like MOSFET devices, the insulated gate bipolar transistor has a high gate impedance, thus low gate current requirements. Like BJTs, this device has low on state voltage drop, thus low power loss across the switch in operating mode. Similar to the GTO, the IGBT can be used to block both positive and negative voltages. Operating currents are fairly high, in excess of 1500 A and switching voltage up to 3000 V. The IGBT has reduced input capacitance compared to MOSFET devices which improves the Miller feedback effect during high dv/dt turn on and turn off.[6]
MOS-controlled thyristor (MCT) The MOS-controlled thyristor is thyristor like and can be triggered on or off by a pulse to the MOSFET gate.[6] Since the input is MOS technology, there is very little current flow, allowing for very low power control signals. The device is constructed with two MOSFET inputs and a pair of BJT output stages. Input MOSFETs are configured to allow turn on control during positive and negative half cycles. The output BJTs are configured to allow for bidirectional control and low voltage reverse blocking. Some benefits to the MCT are fast switching frequencies, fairly high voltage and medium current ratings (around 100 A or so).
Integrated gate-commutated thyristor (IGCT) Similar to a GTO, but without the high current requirements to turn on or off the load. The IGCT can be used for quick switching with little gate current. The devices high input impedance largely because of the MOSFET gate drivers. They have low resistance outputs that don't waste power and very fast transient times that rival that of BJTs. ABB Group company has published data sheets for these devices and provided descriptions of the inner workings. The device consists of a gate, with an optically isolated input, low on resistance BJT output transistors which lead to a low voltage drop and low power loss across the device at fairly high switching voltage and current levels.
An example of this new device from ABB shows how this device improves on GTO technology for switching high voltage and high current in power electronics applications. According to ABB, the IGCT devices are capable of switching in excess of 5000 VAC and 5000 A at very high frequencies, something not possible to do efficiently with GTO devices.

DC/AC converters (inverters)

DC to AC converters produce an AC output waveform from a DC source. Applications include adjustable speed drives (ASD), uninterruptable power supplies (UPS), active filters, Flexible AC transmission systems (FACTS), voltage compensators, and photovoltaic generators. Topologies for these converters can be separated into two distinct categories: voltage source inverters and current source inverters. Voltage source inverters (VSIs) are named so because the independently controlled output is a voltage waveform. Similarly, current source inverters (CSIs) are distinct in that the controlled AC output is a current waveform.

Being static power converters, the DC to AC power conversion is the result of power switching devices, which are commonly fully controllable semiconductor power switches. The output waveforms are therefore made up of discrete values, producing fast transitions rather than smooth ones. The ability to produce near sinusoidal waveforms around the fundamental frequency is dictated by the modulation technique controlling when, and for how long, the power valves are on and off. Common modulation techniques include the carrier-based technique, or Pulse-width modulation, space-vector technique, and the selective-harmonic technique.

Voltage source inverters have practical uses in both single-phase and three-phase applications. Single-phase VSIs utilize half-bridge and full-bridge configurations, and are widely used for power supplies, single-phase UPSs, and elaborate high-power topologies when used in multicell configurations. Three-phase VSIs are used in applications that require sinusoidal voltage waveforms, such as ASDs, UPSs, and some types of FACTS devices such as the STATCOM. They are also used in applications where arbitrary voltages are required as in the case of active filters and voltage compensators.

Current source inverters are used to produce an AC output current from a DC current supply. This type of inverter is practical for three-phase applications in which high-quality voltage waveforms are required.

A relatively new class of inverters, called multilevel inverters, has gained widespread interest. Normal operation of CSIs and VSIs can be classified as two-level inverters, due to the fact that power switches connect to either the positive or to the negative DC bus. If more than two voltage levels were available to the inverter output terminals, the AC output could better approximate a sine wave. It is for this reason that multilevel inverters, although more complex and costly, offer higher performance.

Each inverter type differs in the DC links used, and in whether or not they require freewheeling diodes. Either can be made to operate in square-wave or pulse-width modulation (PWM) mode, depending on its intended usage. Square-wave mode offers simplicity, while PWM can be implemented several different ways and produces higher quality waveforms.

Voltage Source Inverters (VSI) feed the output inverter section from an approximately constant-voltage source.

The desired quality of the current output waveform determines which modulation technique needs to be selected for a given application. The output of a VSI is composed of discrete values. In order to obtain a smooth current waveform, the loads need to be inductive at the select harmonic frequencies. Without some sort of inductive filtering between the source and load, a capacitive load will cause the load to receive a choppy current waveform, with large and frequent current spikes.

There are three main types of VSIs:

Single-phase half-bridge inverter
Single-phase full-bridge inverter
Three-phase voltage source inverter

Single-phase half bridge inverter

The single-phase voltage source half-bridge inverters, are meant for lower voltage applications and are commonly used in power supplieshalf-bridge inverter

Low-order current harmonics get injected back to the source voltage by the operation of the inverter. This means that two large capacitors are needed for filtering purposes in this design.
Inverters can use several modulation techniques to control their switching schemes. The carrier-based PWM technique compares the AC output waveform, vc, to a carrier voltage signal, vΔ. When vc is greater than vΔ, S+ is on, and when vc is less than vΔ, S- is on. When the AC output is at frequency fc with its amplitude at vc, and the triangular carrier signal is at frequency fΔ with its amplitude at vΔ, the PWM becomes a special sinusoidal case of the carrier based PWM.This case is dubbed sinusoidal pulse-width modulation (SPWM).For this, the modulation index, or amplitude-modulation ratio, is defined as ma = vc/v∆ .

The normalized carrier frequency, or frequency-modulation ratio, is calculated using the equation mf = f∆/fc .

If the over-modulation region, ma, exceeds one, a higher fundamental AC output voltage will be observed, but at the cost of saturation. For SPWM, the harmonics of the output waveform are at well-defined frequencies and amplitudes. This simplifies the design of the filtering components needed for the low-order current harmonic injection from the operation of the inverter. The maximum output amplitude in this mode of operation is half of the source voltage. If the maximum output amplitude, ma, exceeds 3.24, the output waveform of the inverter becomes a square wave.

As was true for PWM, both switches in a leg for square wave modulation cannot be turned on at the same time, as this would cause a short across the voltage source. The switching scheme requires that both S+ and S- be on for a half cycle of the AC output period. The fundamental AC output amplitude is equal to vo1 = vaN = 2vi/π .

Its harmonics have an amplitude of voh = vo1/h.

Therefore, the AC output voltage is not controlled by the inverter, but rather by the magnitude of the DC input voltage of the inverter.

Using selective harmonic elimination (SHE) as a modulation technique allows the switching of the inverter to selectively eliminate intrinsic harmonics. The fundamental component of the AC output voltage can also be adjusted within a desirable range. Since the AC output voltage obtained from this modulation technique has odd half and odd quarter wave symmetry, even harmonics do not exist. Any undesirable odd (N-1) intrinsic harmonics from the output waveform can be eliminated.

Single-phase full-bridge inverter

 Carrier and Modulating Signals for the Bipolar Pulsewidth Modulation Technique
The full-bridge inverter is similar to the half bridge-inverter, but it has an additional leg to connect the neutral point to the load.
To avoid shorting out the voltage source, S1+ and S1- cannot be on at the same time, and S2+ and S2- also cannot be on at the same time. Any modulating technique used for the full-bridge configuration should have either the top or the bottom switch of each leg on at any given time. Due to the extra leg, the maximum amplitude of the output waveform is Vi, and is twice as large as the maximum achievable output amplitude for the half-bridge configuration.

States 1 and 2 from Table 2 are used to generate the AC output voltage with bipolar SPWM. The AC output voltage can take on only two values, either Vi or –Vi. To generate these same states using a half-bridge configuration, a carrier based technique can be used. S+ being on for the half-bridge corresponds to S1+ and S2- being on for the full-bridge. Similarly, S- being on for the half-bridge corresponds to S1- and S2+ being on for the full bridge. The output voltage for this modulation technique is more or less sinusoidal, with a fundamental component that has an amplitude in the linear region of less than or equal to one[8] vo1 =vab1= vi • ma.

Unlike the bipolar PWM technique, the unipolar approach uses states 1, 2, 3 and 4 from Table 2 to generate its AC output voltage. Therefore, the AC output voltage can take on the values Vi, 0 or –V . To generate these states, two sinusoidal modulating signals, Vc and –Vc, are needed.

Vc is used to generate VaN, while –Vc is used to generate VbN. The following relationship is called unipolar carrier-based SPWM vo1 =2 • vaN1= vi • ma.

The phase voltages VaN and VbN are identical, but 180 degrees out of phase with each other. The output voltage is equal to the difference of the two phase voltages, and do not contain any even harmonics. Therefore, if mf is taken, even the AC output voltage harmonics will appear at normalized odd frequencies, fh. These frequencies are centered on double the value of the normalized carrier frequency. This particular feature allows for smaller filtering components when trying to obtain a higher quality output waveform.

As was the case for the half-bridge SHE, the AC output voltage contains no even harmonics due to its odd half and odd quarter wave symmetry.

Three-phase voltage source inverter

 Three-Phase Square-Wave Operation a) Switch State S1 b) Switch State S3 c) S1 Output d) S3 Output
Single-phase VSIs are used primarily for low power range applications, while three-phase VSIs cover both medium and high power range applications.
Switches in any of the three legs of the inverter cannot be switched off simultaneously due to this resulting in the voltages being dependent on the respective line current's polarity. States 7 and 8 produce zero AC line voltages, which result in AC line currents freewheeling through either the upper or the lower components. However, the line voltages for states 1 through 6 produce an AC line voltage consisting of the discrete values of Vi, 0 or –Vi.

For three-phase SPWM, three modulating signals that are 120 degrees out of phase with one another are used in order to produce out of phase load voltages. In order to preserve the PWM features with a single carrier signal, the normalized carrier frequency, mf, needs to be a multiple of three. This keeps the magnitude of the phase voltages identical, but out of phase with each other by 120 degrees.The maximum achievable phase voltage amplitude in the linear region, ma less than or equal to one, is vphase = vi / 2. The maximum achievable line voltage amplitude is Vab1 = vab • √3 / 2

The only way to control the load voltage is by changing the input DC voltage.

Current source inverters

 Synchronized-Pulse-Width-Modulation Waveforms for a Three-Phase Current Source Inverter a) Carrier and Modulating Signals b) S1 State c) S3 State d) Output Current

Current source inverters convert DC current into an AC current waveform. In applications requiring sinusoidal AC waveforms, magnitude, frequency, and phase should all be controlled. CSIs have high changes in current overtime, so capacitors are commonly employed on the AC side, while inductors are commonly employed on the DC side. Due to the absence of freewheeling diodes, the power circuit is reduced in size and weight, and tends to be more reliable than VSIs. Although single-phase topologies are possible, three-phase CSIs are more practical.

In its most generalized form, a three-phase CSI employs the same conduction sequence as a six-pulse rectifier. At any time, only one common-cathode switch and one common-anode switch are on.

As a result, line currents take discrete values of –ii, 0 and ii. States are chosen such that a desired waveform is outputted and only valid states are used. This selection is based on modulating techniques, which include carrier-based PWM, selective harmonic elimination, and space-vector techniques.

Carrier-based techniques used for VSIs can also be implemented for CSIs, resulting in CSI line currents that behave in the same way as VSI line voltages. The digital circuit utilized for modulating signals contains a switching pulse generator, a shorting pulse generator, a shorting pulse distributor, and a switching and shorting pulse combiner. A gating signal is produced based on a carrier current and three modulating signals.

A shorting pulse is added to this signal when no top switches and no bottom switches are gated, causing the RMS currents to be equal in all legs. The same methods are utilized for each phase, however, switching variables are 120 degrees out of phase relative to one another, and the current pulses are shifted by a half-cycle with respect to output currents. If a triangular carrier is used with sinusoidal modulating signals, the CSI is said to be utilizing synchronized-pulse-width-modulation (SPWM). If full over-modulation is used in conjunction with SPWM the inverter is said to be in square-wave operation.

The second CSI modulation category, SHE is also similar to its VSI counterpart. Utilizing the gating signals developed for a VSI and a set of synchronizing sinusoidal current signals, results in symmetrically distributed shorting pulses and, therefore, symmetrical gating patterns. This allows any arbitrary number of harmonics to be eliminated. It also allows control of the fundamental line current through the proper selection of primary switching angles. Optimal switching patterns must have quarter-wave and half-wave symmetry, as well as symmetry about 30 degrees and 150 degrees. Switching patterns are never allowed between 60 degrees and 120 degrees. The current ripple can be further reduced with the use of larger output capacitors, or by increasing the number of switching pulses.

The third category, space-vector-based modulation, generates PWM load line currents that equal load line currents, on average. Valid switching states and time selections are made digitally based on space vector transformation. Modulating signals are represented as a complex vector using a transformation equation. For balanced three-phase sinusoidal signals, this vector becomes a fixed module, which rotates at a frequency, ω. These space vectors are then used to approximate the modulating signal. If the signal is between arbitrary vectors, the vectors are combined with the zero vectors I7, I8, or I9.[8] The following equations are used to ensure that the generated currents and the current vectors are on average equivalent.

Multilevel inverters

FIGURE 10: Three-Level Neutral-Clamped Inverter
A relatively new class called multilevel inverters has gained widespread interest. Normal operation of CSIs and VSIs can be classified as two-level inverters because the power switches connect to either the positive or the negative DC bus.[9] If more than two voltage levels were available to the inverter output terminals, the AC output could better approximate a sine wave.[8] For this reason multilevel inverters, although more complex and costly, offer higher performance.[9] A three-level neutral-clamped inverter is shown in Figure 10.

Control methods for a three-level inverter only allow two switches of the four switches in each leg to simultaneously change conduction states. This allows smooth commutation and avoids shoot through by only selecting valid states.[9] It may also be noted that since the DC bus voltage is shared by at least two power valves, their voltage ratings can be less than a two-level counterpart.

Carrier-based and space-vector modulation techniques are used for multilevel topologies. The methods for these techniques follow those of classic inverters, but with added complexity. Space-vector modulation offers a greater number of fixed voltage vectors to be used in approximating the modulation signal, and therefore allows more effective space vector PWM strategies to be accomplished at the cost of more elaborate algorithms. Due to added complexity and number of semiconductor devices, multilevel inverters are currently more suitable for high-power high-voltage applications.[9] This technology reduces the harmonics hence improves overall efficiency of the scheme.